Research on deep trench capacitor structure design and its effect on capacitance density and breakdown voltage

Integrated capacitors can realize the functions of signal coupling, filtering, and noise reduction, offering higher integration, performance and reliability. In this work, the deep trench capacitors are fabricated on Si substrates by employing key process technologies including high-density deep Si etching, highly conductive metal electrode sputtering, and high-K dielectric atomic layer deposition. The effects of the shape, size and arrangement of deep trench capacitors on capacitance density and breakdown voltage are investigated. This work provides theoretical and experimental exploration for the structural design of high-density integrated capacitors and for further improving the capacitance density and reliability of integrated capacitors.