Photoresistors based on nanocomposite obtained by oxidation of GaSe crystals as atmospheric oxide detectors

A novel nanocomposite material based on Ga2Se3 and β-Ga2O3 crystallites photosensitive in the wavelength range from 500 nm to 600 nm of the electromagnetic spectrum was obtained by heat treatment in air at 900 °C of GaSe plates for 30 min. Upon increasing the duration of the heat treatment up to 6 h, complete oxidation of the GaSe plates occurs with the formation of the β-Ga2O3 layer with bandgap width of 4.60 eV and photosensitivity in the ultraviolet region (UV-C). The photosensitivity bands of photoresistors based on Ga2Se3/Ga2O3 composite and nanostructured β-Ga2O3 oxide fall within the absorption band in the green-red and UV-C region, respectively, and the respective photoresistors can serve as airborne ozone detectors.