Insights into the photovoltaic properties of indium sulfide as an electron transport material in perovskite solar cells

According to recent reports, planar structure-based organometallic perovskite solar cells (OPSCs) have achieved remarkable power conversion efficiency (PCE), making them very competitive with the more traditional silicon photovoltaics. A complete understanding of OPSCs and their individual parts is still necessary for further enhancement in PCE. In this work, indium sulfide (In_2S_3)-based planar heterojunction OPSCs were proposed and simulated with the SCAPS (a Solar Cell Capacitance Simulator)-1D programme. Initially, OPSC performance was calibrated with the experimentally fabricated architecture (FTO/In_2S_3/MAPbI_3/Spiro-OMeTAD/Au) to evaluate the optimum parameters of each layer. The numerical calculations showed a significant dependence of PCE on the thickness and defect density of the MAPbI_3 absorber material. The results showed that as the perovskite layer thickness increased, the PCE improved gradually but subsequently reached a maximum at thicknesses greater than 500 nm. Moreover, parameters involving the series resistance as well as the shunt resistance were recognized to affect the performance of the OPSC. Most importantly, a champion PCE of over 20% was yielded under the optimistic simulation conditions. Overall, the OPSC performed better between 20 and 30 °C, and its efficiency rapidly decreases above that temperature.