Efficiency of Spin-Transfer Torque assist Spin-Orbit Torque Magneti-zation Switching under In-plane External Field Application

The 3-Dimensional Domain Wall Magnetic Memory (3D-DWMM) is regarded as the next generation magnetic memory with incredible storage density exceeding 30 Tb/cm2, which is unattainable for today's MRAM. For the writing process, implementing spin-transfer torque (STT) and spin-orbit torque (SOT) simultaneously is a suitable approach for 3D-DWMM. In previous research, we fabricated a GMR device, and studied the STT assist SOT switching experimentally, discovered the STT assist efficiency was dependent on external field. In this study, we employed micromagnetic simulation to analyze how external field affect the STT-SOT switching as well as the switching efficiency. The experimental STT-SOT switching was successfully reproduced by the simulation, and it was found that STT torque deviates the memory layer magnetization from the initial direction, which contributes the reduction of SOT switching current density.