Design of Double-Gate Tri-Active Layer Channel Based IGZO Thin-Film Transistor for Improved Performance of Ultra-Low-Power RFID Rectifier

In a Radio Frequency Identification (RFID) circuit, the rectifier plays a vital role since it converts the received RF energy from a distant transmitter (reader) to power the entire RF circuit of the passive tag. The thin-film transistors have the potential to affect the rectifier circuit performance using the channel structural modification in the device to accomplish better gate-control for low-power operations. In this paper, the authors have presented a novel design of a double-gate amorphous In-Ga-Zn-O (IGZO) based thin-film transistor with a tri-active layer channel structure. Further, the experimental characterization of the device has been implemented using the SPICE model to analyze the device performance in the rectifier circuits. The simulation reports the competitive results with an improved rectifier performance using the proposed structure. The performance of ultra-low-power rectifier topologies has been compared with the conventional rectifier circuit. Among others, the differential rectifier circuit arrangement has a high power conversion efficiency of 20.06 % for low input 0.45 V–0.61 V, whereas Self- $\text{V}_{\mathrm {TH}}$ -Cancellation (SVC) configuration optimum power consumption is $0.14~\mu W$ . The promising results suggest the device deployment in the passive RFID tags and implantable devices in ultra-low-power integrated circuits.