CONJUGATED MODELING OF DEFECT FORMATION DURING GROWTH AND HEAT ANNEALING OF DISLOCATION-FREE SILICON SINGLE CRYSTALS

The optimization of Czochralski silicon single crystal growth and the rapid thermal annealing (RTA) of cut wafers from these crystals are considered. Special thermal shields are mounted in hot zone for optimization of temperature field in growing single crystal. Thermal optimization of such hot zone is carried out on the basis of an integrated thermal mathematical model. Defect formation is calculated on basis of the diffusion-recombination approximation for vacancies and interstitial silicon atoms. The RTA profiles of vacancy concentrations, densities, sizes of vacancy clusters are calculated along wafer’s thickness.