ANÁLISE DA JUNÇÃO FLUTUANTE NO CAMPO RETRODIFUSOR DE BORO EM CÉLULAS SOLARES PERT BIFACIAIS

. Bifacial solar cells convert the solar irradiance on both faces and the PERC configurations have the potential to increase the efficiency due to passivation of both faces. In p-type devices, the passivation of the boron back surface field (BSF) is a challenge. An alternative to the conventional passivation methods is the floating junction. The goal of this paper is to analyze the floating junction formed in the boron surface field of p-type PERT bifacial solar cells, with different BSF sheet resistances. The dopants were deposited by the spin-on method to form the BSF and the floating junction. The efficiency in the emitter decreased with the increasing of the boron-BSF sheet resistance from (28 ± 2) to (53 ± 3) Ω/□ and the floating junction did not improve the electrical parameters. The highest efficiency of the solar cell with only SiO 2 passivation was 16.9 % and with floating junction the efficiency reached was 15.9 %. With irradiance on the BSF, the reduction of the short circuit current density (J SC ) and open circuit voltage increased in the floating junction solar cells. However, the quantum efficiency shows that the floating junction passivated the boron-doped surface, but the solar grade