A Review of Atomic Layer Deposition (ALD) for High-Performance Thin-Film Transistors with Indium-Gallium Oxide Doping

The current article is a summary of recent advances and important trends in the field of flexible oxide thin film transistors (TFTs) manufactured using atomic layer deposition (ALD) methods. The ALD technique allows for precise control of layer thickness and composition, as well as the ability to achieve great uniformity over huge areas at low temperatures. This article covers the study's primary objective and contributions. The article focuses on advances in thin-film transistor (TFT) technology made possible by the use of Indium-Gallium Oxide (IGO) as the channel material, which is manufactured using the precise Atomic Layer Deposition (ALD) technique. The abstract emphasizes the need of high-performance TFTs in current electronics and describes the advantages of IGO, such as improved electron mobility and stability. The article explains the function of the ALD method in achieving accurate film deposition and homogeneity, which results in improved TFT performance. Firstly, introduction of thin film transistor and atomic layer deposition has been discussed. Steps of ALD and challenges have been discussed in this review. The overview closes by underlining the potential influence of this discovery on future electronic applications that require efficient, dependable, and high-performance thin-film transistors for various devices. This study can help future recommendations by policy-makers, producers, entrepreneurs, and utilities grow to make thin film transistor with accurate and efficient way.