High Density MIMCAPs in a 300mm Silicon Interposer using High-k Dielectric and 3D Oxide-studs for mm-Wave Applications

This paper reports RF performance of 2.5D Metal-Insulator-Metal CAPacitors (MIMCAPs) within a 300 mm silicon (Si) interposer. The MIMCAPs use both high-k dielectric and 3D oxide-stud patterning to simultaneously achieve high capacitance density, high breakdown voltage and high Self Resonance Frequency (SRF). DC capacitance densities exceed $30 \text{fF} / \mu \mathrm{m}^{2}$ calculated using the parallel plate approximation. Shunt capacitors show SRF between 60-70 GHz (2 pF), 40-50 GHz (4 pF) and 30-40 GHz (9 pF). Series capacitor of 2 pF shows a SRF between 25-30 GHz. Such capacitors can be used for both supply decoupling and as circuit elements for various chiplets mounted on the silicon interposer.