Emerging MoS2 Wafer-Scale Technique for Integrated Circuits

As an outstanding representative of layered materials, molybdenum disulfide (MoS_2) has excellent physical properties, such as high carrier mobility, stability, and abundance on earth. Moreover, its reasonable band gap and microelectronic compatible fabrication characteristics makes it the most promising candidate in future advanced integrated circuits such as logical electronics, flexible electronics, and focal-plane photodetector. However, to realize the all-aspects application of MoS_2, the research on obtaining high-quality and large-area films need to be continuously explored to promote its industrialization. Although the MoS_2 grain size has already improved from several micrometers to sub-millimeters, the high-quality growth of wafer-scale MoS_2 is still of great challenge. Herein, this review mainly focuses on the evolution of MoS_2 by including chemical vapor deposition, metal–organic chemical vapor deposition, physical vapor deposition, and thermal conversion technology methods. The state-of-the-art research on the growth and optimization mechanism, including nucleation, orientation, grain, and defect engineering, is systematically summarized. Then, this review summarizes the wafer-scale application of MoS_2 in a transistor, inverter, electronics, and photodetectors. Finally, the current challenges and future perspectives are outlined for the wafer-scale growth and application of MoS_2. This review summarized the state of the art of MoS_2 from their controllable growth and potential application in integrated circuit. The influence of promoter, substrate, pressure, catalyst and precursor on the nucleation and growth are discussed. The current challenges and future perspectives of wafer-scale MoS_2 are outlined from the materials and device applications.