Design of 2.5D Interposer in High Bandwidth Memory and Through Silicon Via for High Speed Signal
Design of 2.5D Interposer in High Bandwidth Memory and Through Silicon Via for High Speed Signal
Bo Pu
2020 · DOI: 10.36227/techrxiv.12950261
4 Citations
TLDR
To overcome high speed switching bottleneck caused by the large resistive and capacitive characteristics of interposer, design methods to achieve an optimized performance in a limited routing area are proposed.
Abstract
The 2.5D interposer becomes a crucial solution to realize
grand bandwidth of HBM for the increasing data requirement of highperformance computing (HPC) and Artificial Intelligence (AI)applications. To overcome high speed switching bottleneck caused by the largeresistive and capacitive characteristics of interposer, design methods toachieve an optimized performance in a limited routing area are proposed. Unlikethe conventional single through silicon via (TSV), considering the reliability,multiple TSV are used as the robust 3D interconnects for each signal path. Anequivalent model to accurately describe the electrical characteristics of themultiple TSVs, and a configuration pattern strategy of TSV to mitigatecrosstalk are also proposed.