8‐1: Invited Paper: High Mobility Poly‐Crystalline Oxide TFT Achieving Mobility over 50 cm2/Vs and High Level of Uniformity on the Large Size Substrates

We have successfully developed stable poly‐crystalline oxide semiconductor (Poly‐OS) as channels of TFT on Gen.6 glass substrates. This technology has significantly improved mobility and stability at the same time, achieving both extremely low off‐state current similar to conventional oxide TFTs and high on‐state current equivalent to LTPS TFTs.