Role of gallium and yttrium dopants on the stability and performance of solution processed indium oxide thin-film transistors
Role of gallium and yttrium dopants on the stability and performance of solution processed indium oxide thin-film transistors
Felix Jaehnike,D. Pham,C. Bock,U. Kunze
2019 · DOI: 10.1039/C8TC06270F
Journal of Materials Chemistry C · 引用 15 次
摘要
We study the effect of gallium and yttrium doping on both the electrical performance and the stability of indium based metal-oxide thin-film transistors (MOTFTs) at varied concentrations.